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多孔碳化硅的稳定场发射。

Stable field emission from nanoporous silicon carbide.

机构信息

The Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899-6204, USA.

出版信息

Nanotechnology. 2013 Feb 15;24(6):065201. doi: 10.1088/0957-4484/24/6/065201. Epub 2013 Jan 16.

Abstract

We report on a new type of stable field emitter capable of electron emission at levels comparable to thermal sources. Such an emitter potentially enables significant advances in several important technologies which currently use thermal electron sources. These include communications through microwave electronics, and more notably imaging for medicine and security where new modalities of detection may arise due to variable-geometry x-ray sources. Stable emission of 6 A cm(-2) is demonstrated in a macroscopic array, and lifetime measurements indicate these new emitters are sufficiently robust to be considered for realistic implementation. The emitter is a monolithic structure, and is made in a room-temperature process. It is fabricated from a silicon carbide wafer, which is formed into a highly porous structure resembling an aerogel, and further patterned into an array. The emission properties may be tuned both through control of the nanoscale morphology and the macroscopic shape of the emitter array.

摘要

我们报告了一种新型的稳定场发射器,能够以与热源相当的水平进行电子发射。这种发射器有可能在目前使用热电子源的几项重要技术中取得重大进展。这些技术包括通过微波电子进行通信,以及在医学和安全成像方面的应用,因为可变几何形状的 X 射线源可能会出现新的检测模式。在宏观阵列中演示了 6 A cm(-2)的稳定发射,寿命测量表明这些新型发射器足够坚固,可以考虑实际应用。发射器是一种整体式结构,采用室温工艺制造。它由碳化硅晶片制成,该晶片被形成高度多孔的结构,类似于气凝胶,然后进一步图案化为阵列。通过控制纳米级形貌和发射器阵列的宏观形状,可以对发射特性进行调整。

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