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富硅氧化硅中嵌入的硅纳米晶体所受压缩应力与基质结构有序性的相关性。

Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide.

机构信息

Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.

出版信息

Nanoscale Res Lett. 2013 Jan 21;8(1):40. doi: 10.1186/1556-276X-8-40.

Abstract

Silicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on the silicon nanocrystal cores. The stress varies as a function of silicon concentration in the silicon-rich silicon oxide layers varies, which can be attributed to changes of nanocrystal environment. By conducting the Fourier transform infrared absorption experiments, we have correlated the stresses exerted on the nanocrystal core to the degree of matrix structural order. PACS: 78.67.Bf, 78.67.Pt, 73.63.Bd, 78.47.D, 74.25.Nd.

摘要

掺硅氧化物中嵌入硅纳米晶采用射频反应磁控溅射法进行沉积。通过拉曼光谱,我们发现硅纳米晶核上存在压应力。这种压应力随富硅氧化硅层中硅浓度的变化而变化,这可以归因于纳米晶环境的变化。通过进行傅里叶变换红外吸收实验,我们将施加在纳米晶核上的应力与基质结构有序度相关联。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fcc4/3605160/897ca324579d/1556-276X-8-40-1.jpg

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