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成分梯度 PbZr(1-x)Ti(x)O3 薄膜中出人意料的晶体和畴结构及性能。

Unexpected crystal and domain structures and properties in compositionally graded PbZr(1-x)Ti(x)O3 thin films.

机构信息

Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA.

出版信息

Adv Mater. 2013 Mar 25;25(12):1761-7. doi: 10.1002/adma.201204240. Epub 2013 Jan 29.

DOI:10.1002/adma.201204240
PMID:23359407
Abstract

Synthesis of compositionally graded versions of PbZr(1-x)Ti(x)O3 thin films results in unprecedented strains (as large as ≈4.5 × 10(5) m(-1)) and correspondingly unexpected crystal structures, ferroelectric domain structures, and properties. This includes the observation of built-in electric fields in films as large as 200 kV/cm. Compositional and strain gradients could represent a new direction of strain-control of materials.

摘要

合成成分梯度的 PbZr(1-x)Ti(x)O3 薄膜会导致前所未有的应变（高达 ≈4.5×10(5) m(-1))，以及相应的出人意料的晶体结构、铁电畴结构和性能。这包括在高达 200 kV/cm 的薄膜中观察到内置电场。组成和应变梯度可能代表材料应变控制的一个新方向。

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