Van Lich Le, Dinh Van-Hai
School of Materials Science and Engineering, Hanoi University of Science and Technology No 1, Dai Co Viet Street Hanoi Vietnam
RSC Adv. 2019 Mar 6;9(13):7575-7586. doi: 10.1039/c8ra10614b. eCollection 2019 Mar 1.
Compositionally graded ferroelectrics (cgFEs), which possess a spatial variation in material composition, exhibit anomalous or even unprecedented properties. Despite several breakthroughs having been achieved in experiments, there surprisingly is a lack of an effective simulation approach for cgFEs, thereby greatly hindering a deep understanding about underlying mechanisms hidden behind the observed phenomena. In this study, an improved phase field model is proposed for a cgFE made of PbZrTi O based on the Ginzburg-Landau theory. The improved approach enables us to capture several key phenomena occurring in the cgFE PbZrTiO ⇔ PbZrTiO thin film that are observed from experiments, such as the formation of needle-like domains with curved domain walls, ferroelastic switching under an electric field, and the voltage offset of the hysteresis loop. Results obtained from the improved approach indicate that the high elastic energy near the needle-tip of an -domain gives rise to a deflection of the domain wall from the regular / domain wall, while the high concentration of the depolarization field shrinks a part of the -domain near the needle-tip and terminates the -domain within the cgFE thin film. These facilitate the stabilization of needle-like domains with curved domain walls in the cgFE thin film. Furthermore, the flexoelectricity is proven to play an important role in the voltage offset of the hysteresis loop. On the other hand, the ferroelectric switching process in the cgFE thin film exhibits a vastly different response in comparison to that in homogeneous ferroelectric thin films, including local switching initiation and formation and annihilation of vortex-antivortex pairs during the switching. The present study, therefore, provides an incisive approach for investigations on cgFEs, which may bring new understanding and unique insights into these complex materials, as well as novel potential applications.
成分渐变铁电体(cgFEs)在材料成分上存在空间变化,展现出异常甚至前所未有的特性。尽管在实验中已取得多项突破,但令人惊讶的是,对于cgFEs缺乏有效的模拟方法,这极大地阻碍了对观察到的现象背后潜在机制的深入理解。在本研究中,基于金兹堡 - 朗道理论,针对由PbZrTiO制成的cgFE提出了一种改进的相场模型。该改进方法使我们能够捕捉到在实验中观察到的cgFE PbZrTiO⇔PbZrTiO薄膜中出现的几个关键现象,例如具有弯曲畴壁的针状畴的形成、电场作用下的铁弹性转变以及磁滞回线的电压偏移。从改进方法获得的结果表明,-畴针尖附近的高弹性能导致畴壁从规则的/畴壁发生偏转,而去极化场的高浓度使针尖附近的一部分-畴收缩,并在cgFE薄膜内终止-畴。这些有助于在cgFE薄膜中稳定具有弯曲畴壁的针状畴。此外,证明了挠曲电效应在磁滞回线的电压偏移中起重要作用。另一方面,与均匀铁电薄膜相比,cgFE薄膜中的铁电转变过程表现出截然不同的响应,包括局部转变起始以及转变过程中涡旋 - 反涡旋对的形成和湮灭。因此,本研究为cgFEs的研究提供了一种深刻的方法,这可能会为这些复杂材料带来新的理解和独特的见解,以及新颖的潜在应用。