Institut für Werkstoffe der Elektrotechnik 2 & JARA-FIT, RWTH Aachen University, 52056 Aachen, Germany.
Sci Rep. 2013;3:1169. doi: 10.1038/srep01169. Epub 2013 Jan 30.
AgI nanoionics-based resistive switching memories were studied in respect to chemical stability of the Ag/AgI interface using x-ray absorption spectroscopy. The apparent dissolution of Ag films of thickness below some tens of nanometers and the loss of electrode/electrolyte contact was critically addressed. The results evidently show that there are no chemical interactions at the interface despite the high ionic mobility of Ag ions. Simulation results further show that Ag metal clusters can form in the AgI layer with intermediate-range order at least up to next-next nearest neighbors, suggesting that Ag can permeate into the AgI only in an aggregated form of metal crystallite.
采用 X 射线吸收光谱法研究了基于 AgI 纳米离子的阻变存储器中 Ag/AgI 界面的化学稳定性。重点研究了厚度低于几十纳米的 Ag 薄膜的明显溶解以及电极/电解质接触的损失。结果清楚地表明，尽管 Ag 离子具有高离子迁移率，但界面处没有化学相互作用。模拟结果还进一步表明，Ag 金属团簇可以在 AgI 层中形成，至少在次近邻范围内具有中程有序，这表明 Ag 只能以金属微晶的聚集形式渗透到 AgI 中。
