Bürgi J, Neuenschwander R, Kellermann G, García Molleja J, Craievich A F, Feugeas J
Instituto de Física Rosario (CONICET-UNR), Bv. 27 de Febrero 210 bis, S2000EZP Rosario, Argentina.
Rev Sci Instrum. 2013 Jan;84(1):015102. doi: 10.1063/1.4773002.
The purpose of the designed reactor is (i) to obtain polycrystalline and∕or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, fixed α-2θ scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer.
（i）通过反应溅射磁控管诱导的可控沉积获得多晶和/或非晶薄膜；（ii）在整个生长过程中实时通过X射线衍射对沉积的薄膜进行并行原位结构研究。所设计的反应器能够控制并精确改变相关工艺参数，即磁控管靶材与样品的距离、直流磁控管电压、气体混合物的性质、气体压力和衬底温度。另一方面，该腔室可用于不同的X射线衍射扫描模式，即θ-2θ扫描、固定α-2θ扫描，以及低角度技术，如掠入射小角X射线散射和X射线反射率。该腔室安装在位于同步加速器光束线的标准四圆衍射仪上，首次用于在（100）硅晶片表面生长AlN薄膜期间的初步X射线衍射分析。
