Department of Chemistry, Texas A&M University, College Station, Texas 77842, USA.
J Am Chem Soc. 2013 Mar 20;135(11):4203-6. doi: 10.1021/ja3126382. Epub 2013 Mar 12.
We describe a high-resolution, high-sensitivity negative-tone photoresist technique that relies on bottom-up preassembly of differential polymer components within cylindrical polymer brush architectures that are designed to align vertically on a substrate and allow for top-down single-molecule line-width imaging. By applying cylindrical diblock brush terpolymers (DBTs) with a high degree of control over the synthetic chemistry, we achieved large areas of vertical alignment of the polymers within thin films without the need for supramolecular assembly processes, as required for linear block copolymer lithography. The specially designed chemical compositions and tuned concentric and lengthwise dimensions of the DBTs enabled high-sensitivity electron-beam lithography of patterns with widths of only a few DBTs (sub-30 nm line-width resolution). The high sensitivity of the brush polymer resists further facilitated the generation of latent images without postexposure baking, providing a practical approach for controlling acid reaction/diffusion processes in photolithography.
我们描述了一种高分辨率、高灵敏度的负性光刻胶技术，该技术依赖于在圆柱形聚合物刷结构内进行差分聚合物组件的自下而上预组装，这些结构被设计成在基底上垂直排列，并允许自上而下的单分子线宽成像。通过应用具有高度可控合成化学的圆柱形嵌段共聚物三嵌段共聚物（DBT），我们实现了薄膜内聚合物的大面积垂直排列，而无需线性嵌段共聚物光刻所需的超分子组装过程。DBT 的特殊设计的化学成分和调谐的同心和纵向尺寸使图案的电子束光刻具有仅几个 DBT（亚 30nm 线宽分辨率）的宽度成为可能。刷状聚合物抗蚀剂的高灵敏度进一步促进了无后曝光烘焙的潜像生成，为控制光刻中的酸反应/扩散过程提供了一种实用方法。
