School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea.
Nanotechnology. 2013 May 3;24(17):175202. doi: 10.1088/0957-4484/24/17/175202. Epub 2013 Apr 4.
The feasibility of a high speed ferroelectric graphene memory device using a ferroelectric polymer (PVDF-TrFE)/graphene stack has been demonstrated. The conductivity of this metal-ferroelectric-graphene (MFG) device could be modulated up to 775% with a very fast programming speed down to 10 ns. Also, programmed states were maintained up to 1000 s with endurance over 1000 cycles. In addition to demonstrating a single memory device, the array-level integration and cell write/read functionality of a 4 × 4 MFG array adopting a graphene bit line has also been confirmed to show the feasibility of MFG memory.
已经证明了使用铁电聚合物（PVDF-TrFE）/石墨烯叠层的高速铁电石墨烯存储器件的可行性。该金属-铁电-石墨烯（MFG）器件的电导率可通过高达 775%的调制，编程速度快至 10 ns。此外，在 1000 次循环的耐久性测试中，器件可保持编程状态长达 1000 秒。除了演示单个存储器件之外，还确认了采用石墨烯位线的 4×4 MFG 阵列的阵列级集成和单元写入/读取功能，以展示 MFG 存储的可行性。
