Khan Shenawar Ali, Jeong Hyeon-Seok, Rahman Sheik Abdur, Bae Jin-Hyuk, Kim Woo Young
Department of Electronic Engineering, Jeju National University, Jeju 63243, Korea.
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
J Nanosci Nanotechnol. 2019 Aug 1;19(8):4803-4806. doi: 10.1166/jnn.2019.16703.
The mechanical flexibility of both ferroelectric polymer and graphene provides the possibility for the memory device based on ferroelectric polymer and grapheme to operate on flexible substrate. Here, a memory device was fabricated on flexible substrate through the continuous transfer process of the two units with the ferroelectric polymer and the graphene hybrid film as one unit, and characterized. In particular, characteristics were maintained even with repetitive bending. The transfer process demonstrated in this paper is useful for implementing a memory device on a large-area substrate by consuming a very small amount of graphene.
铁电聚合物和石墨烯的机械柔韧性为基于铁电聚合物和石墨烯的存储器件在柔性基板上运行提供了可能性。在此，通过将铁电聚合物和石墨烯混合膜作为一个单元的两个单元的连续转移过程，在柔性基板上制造了一个存储器件，并对其进行了表征。特别是，即使反复弯曲，其特性仍能保持。本文所展示的转移过程对于通过消耗极少量的石墨烯在大面积基板上实现存储器件很有用。
