Su Meng, Yang Zhenyu, Liao Lei, Zou Xuming, Ho Johnny C, Wang Jingli, Wang Jianlu, Hu Weida, Xiao Xiangheng, Jiang Changzhong, Liu Chuansheng, Guo Tailiang
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
Department of Physics and Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong SAR China.
Adv Sci (Weinh). 2016 Apr 15;3(9):1600078. doi: 10.1002/advs.201600078. eCollection 2016 Sep.
is demonstrated. The design of the side-gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the side-gate geometries.
得到了证明。侧栅结构的设计不仅简化了制造工艺，而且避免了对有机铁电薄膜的任何沉积后损伤。这些器件在非易失性存储器应用中表现出优异的性能，并且可以通过调整侧栅几何形状有效地调制存储器滞后现象。
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