Department of Chemistry, Nagoya University, Nagoya, Japan.
Sci Rep. 2013;3:1617. doi: 10.1038/srep01617.
Graphene nanoribbons (GNR) are one of the most promising candidates for the fabrication of graphene-based nanoelectronic devices such as high mobility field effect transistors (FET). Here, we report a high-yield fabrication of a high quality another type of GNR analogue, fully flattened carbon nanotubes (flattened CNTs), using solution-phase extraction of inner tubes from large-diameter multi-wall CNTs (MWCNTs). Transmission electron microscopy (TEM) observations show that flattened CNTs have width of typically 20 nm and a barbell-like cross section. Measurements of the low-bias conductance of isolated flattened CNTs as a function of gate voltage shows that the flattened CNTs display ambipolar conduction which is different from those of MWCNTs. The estimated gap based on temperature dependence of conductivity measurements of isolated flattened CNTs is 13.7 meV, which is probably caused by the modified electronic structure due to the flattening.
石墨烯纳米带(GNR)是制造基于石墨烯的纳米电子器件(如高迁移率场效应晶体管(FET))的最有前途的候选材料之一。在这里,我们报告了一种高产率的方法,通过从大直径多壁碳纳米管(MWCNT)中溶液相提取内管,制备出另一种高质量的 GNR 类似物——完全扁平化的碳纳米管(flattened CNT)。透射电子显微镜(TEM)观察表明,扁平化 CNT 的宽度通常为 20nm,具有哑铃状的横截面。对孤立的扁平化 CNT 的低偏压电导随栅极电压的函数的测量表明,扁平化 CNT 表现出双极性传导,这与 MWCNT 不同。基于孤立扁平化 CNT 电导率对温度依赖性的测量,估计的能隙为 13.7meV,这可能是由于扁平化导致的电子结构的改变。