Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA.
Nano Lett. 2010 May 12;10(5):1917-21. doi: 10.1021/nl100840z.
The integration ultrathin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for GNR field-effect transistors with ultrathin high-k dielectrics. The Si/HfO(2) core/shell nanowires are synthesized by atomic layer deposition of the HfO(2) shell on highly doped silicon nanowires with a precise control of the dielectric thickness down to 1-2 nm. Using the core/shell nanowires as the top-gates, high-performance GNR transistors have been achieved with transconductance reaching 3.2 mS microm(-1), the highest value for GNR transistors reported to date. This method, for the first time, demonstrates the effective integration of ultrathin high-k dielectrics with graphene with precisely controlled thickness and quality, representing an important step toward high-performance graphene electronics.
将超薄高介电常数（高 k）材料与石墨烯纳米带（GNRs）集成用于顶栅晶体管可以推动其在纳米电子学方面的性能极限。在这里，我们报告了在单个 GNR 顶部组装 Si/HfO(2)核/壳纳米线作为具有超薄高 k 电介质的 GNR 场效应晶体管的顶栅。通过原子层沉积在高掺杂硅纳米线上沉积 HfO(2)壳，精确控制介电层厚度低至 1-2nm，合成了 Si/HfO(2)核/壳纳米线。使用核/壳纳米线作为顶栅，实现了高性能 GNR 晶体管，其跨导达到 3.2mS µm(-1)，这是迄今为止报道的 GNR 晶体管的最高值。该方法首次证明了超薄高 k 电介质与石墨烯的有效集成，具有精确控制的厚度和质量，代表了迈向高性能石墨烯电子学的重要一步。
