Organic Semiconductor Centre, SUPA, School of Physics & Astronomy, University of St Andrews, St Andrews, UK.
Adv Mater. 2013 May 28;25(20):2826-30. doi: 10.1002/adma.201205096. Epub 2013 Apr 12.
An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs.
本文展示了一种通过紫外纳米压印光刻(UV-NIL)简单制造的有机半导体激光器,该激光器采用脉冲氮化铟镓(InGaN)发光二极管(LED)进行泵浦。通过对纳米压印聚合物分布式反馈谐振器中的聚合物增益介质进行分子量优化,实现了最低的报告 UV-NIL 激光阈值密度 770 W cm(-2) ,这为与大规模生产的 LED 兼容的可扩展有机激光制造奠定了基础。