L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125 Milano, Italy.
Nanotechnology. 2013 May 24;24(20):205603. doi: 10.1088/0957-4484/24/20/205603. Epub 2013 Apr 23.
We present an experimental investigation of the crystallization dynamics of Ga nano-droplets under As flux. The transformation of the metallic Ga contained in the droplets into a GaAs nano-island proceeds by increasing the size of a tiny ring of GaAs which is formed just after the Ga deposition at the rim of a droplet. The GaAs crystallization rate depends linearly on the liquid-solid interface area. The maximum growth rate is set by the As flux impinging on the droplet, thus showing an efficient As incorporation and transport despite the predicted low solubility of the As in metallic Ga at the crystallization temperatures.
我们对 Ga 纳米液滴在 As 通量下的结晶动力学进行了实验研究。液滴中所含的金属 Ga 通过增加在液滴边缘 Ga 沉积后立即形成的 GaAs 微小环的尺寸转化为 GaAs 纳米岛。GaAs 的结晶速率与固液界面面积呈线性关系。最大生长速率由撞击液滴的 As 通量决定，尽管在结晶温度下预测 Ga 中 As 的溶解度较低，但仍表现出有效的 As 掺入和传输。
