L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125 Milano, Italy.
Nanotechnology. 2011 May 6;22(18):185602. doi: 10.1088/0957-4484/22/18/185602. Epub 2011 Mar 17.
The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.
通过纯自组装方法制备了 GaAs/AlGaAs 点-环量子纳米结构。该生长是通过液滴外延进行的,通过砷通量和衬底温度,可以精细控制纳米尺度金属 Ga 储层在表面上的结晶动力学。这种方法允许将量子点和量子环组合成一个单一的、多功能的复杂量子纳米结构。