Max-Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany.
Adv Mater. 2013 Jun 18;25(23):3187-91. doi: 10.1002/adma.201300973. Epub 2013 May 2.
Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
通过金属辅助化学刻蚀（MaCE），可以观察到冶金硅的纯度从 99.74%提高到 99.9884%，升级冶金硅的纯度从 99.999772%提高到 99.999899%。此外，还制备了大面积的硅纳米线（SiNW）。这种净化效果使基于 SiNW 的光电化学电池的光电流增加了约 35%。
