Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA.
Phys Chem Chem Phys. 2013 Jun 28;15(24):9735-41. doi: 10.1039/c3cp51478a. Epub 2013 May 14.
In this paper, we report on the device physics and charge transport characteristics of high-mobility dual-gated polymer thin-film transistors with active semiconductor layers consisting of thiophene flanked DPP with thienylene-vinylene-thienylene (PDPP-TVT) alternating copolymers. Room temperature mobilities in these devices are high and can exceed 2 cm(2) V(-1) s(-1). Steady-state and non-quasi-static measurements have been performed to extract key transport parameters and velocity distributions of charge carriers in this copolymer. Charge transport in this polymer semiconductor can be explained using a Multiple-Trap-and-Release or Monroe-type model. We also compare the activation energy vs. field-effect mobility in a few important polymer semiconductors to gain a better understanding of transport of DPP systems and make appropriate comparisons.
本文报道了由噻吩并二苯并吡咯（DPP）与噻吩并[3,2-b]噻吩并[2,3-d]噻吩并[3,4-b]噻吩并[2,1-b]噻吩（PDPP-TVT）交替共聚体制成的活性半导体层的双栅高迁移率聚合物薄膜晶体管的器件物理和电荷输运特性。这些器件的室温迁移率较高，超过 2 cm(2) V(-1) s(-1)。我们进行了稳态和非准静态测量，以提取该共聚物中载流子的关键输运参数和速度分布。可以使用多陷阱和释放或 Monroe 模型来解释该聚合物半导体中的电荷输运。我们还比较了一些重要聚合物半导体的激活能与场效应迁移率，以更好地了解 DPP 体系的输运并进行适当的比较。
