Kim Youngsik, Chang Jun Hyuk, Choi Hyekyoung, Kim Yong-Hyun, Bae Wan Ki, Jeong Sohee
Department of Energy Science, Center for Artificial Atoms, Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea
School of Chemical and Biological Engineering, Seoul National University Seoul Republic of Korea.
Chem Sci. 2019 Nov 26;11(4):913-922. doi: 10.1039/c9sc04290c.
Colloidal quantum dots (QDs) are nanosized semiconductors whose electronic features are dictated by the quantum confinement effect. The optical, electrical, and chemical properties of QDs are influenced by their dimensions and surface landscape. The surface of II-VI and IV-VI QDs has been extensively explored; however, in-depth investigations on the surface of III-V QDs are still lagging behind. This Perspective discusses the current understanding of the surface of III-V QDs, outlines deep trap states presented by surface defects, and suggests strategies to overcome challenges associated with deep traps. Lastly, we discuss a route to create well-defined facets in III-V QDs by providing a platform for surface studies and a recently reported approach in atomistic understanding of covalent III-V QD surfaces using the electron counting model with fractional dangling bonds.
胶体量子点（QDs）是纳米尺寸的半导体，其电子特性由量子限制效应决定。量子点的光学、电学和化学性质受其尺寸和表面形貌影响。II-VI族和IV-VI族量子点的表面已得到广泛研究；然而，对III-V族量子点表面的深入研究仍滞后。本视角讨论了目前对III-V族量子点表面的理解，概述了表面缺陷呈现的深陷阱态，并提出了克服与深陷阱相关挑战的策略。最后，我们通过提供一个表面研究平台以及最近报道的一种使用具有分数悬空键的电子计数模型对共价III-V族量子点表面进行原子尺度理解的方法，来讨论在III-V族量子点中创建明确晶面的途径。
