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利用原子力显微镜(AFM)探针进行局部蚀刻实现金属薄膜的单步电化学纳米光刻。

Single-step electrochemical nanolithography of metal thin films by localized etching with an AFM tip.

作者信息

de Abril O, Gündel A, Maroun F, Allongue P, Schuster R

机构信息

Physique de la Matière Condensée, Ecole Polytechnique, CNRS, F-91128 Palaiseau, France.

出版信息

Nanotechnology. 2008 Aug 13;19(32):325301. doi: 10.1088/0957-4484/19/32/325301. Epub 2008 Jul 2.

Abstract

This work introduces electrochemical nanolithography (ENL), a single-step method in which a metal thin film is locally etched without application of a mask on a 100 nm length scale with an electrochemical atomic force microscope (AFM). The method requires the application of ultra-short voltage pulses on the tip (nanosecond range duration, 2-4 V amplitude), while both the sample and the metalized tip are under independent potentiostatic control for full control of interface reactions in an AFM electrochemical cell. It is demonstrated that Cu films as well as Co and Cu/Co sandwich magnetic films can be patterned if negative voltage pulses are applied to the tip. This method also applies to films deposited on an insulating substrate. Moreover the lateral dimension of lithographed structures is tunable, from a few micrometers down to 150 nm, by appropriate choice of ENL conditions. Simulation of the dissolution process is discussed.

摘要

这项工作介绍了电化学纳米光刻技术(ENL),这是一种单步方法,其中使用电化学原子力显微镜(AFM)在100纳米长度尺度上对金属薄膜进行局部蚀刻,而无需施加掩膜。该方法需要在尖端施加超短电压脉冲(持续时间在纳秒范围内,幅度为2 - 4伏),同时样品和金属化尖端在独立的恒电位控制下,以全面控制AFM电化学池中界面反应。结果表明,如果向尖端施加负电压脉冲,铜膜以及钴和铜/钴夹心磁性膜都可以进行图案化。该方法也适用于沉积在绝缘基板上的薄膜。此外,通过适当选择ENL条件,光刻结构的横向尺寸可调,范围从几微米到150纳米。文中还讨论了溶解过程的模拟。

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