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通过溶液浸渍工艺将高导电率的铝薄膜直接沉积在基底上。

Direct deposition of highly conductive aluminum thin film on substrate by solution-dipping process.

出版信息

ACS Appl Mater Interfaces. 2013 Jun 12;5(11):4581-5. doi: 10.1021/am400812e. Epub 2013 Jun 3.

DOI:10.1021/am400812e
PMID:23716504
Abstract

A solution-dipping process consisting of 2 steps, including (i) a catalytic treatment of the substrate and (ii) an immersion of the catalytically treated substrate into an aluminum precursor solution of AlH3{O(C4H9)2}, is suggested for the low-cost and simple preparation of aluminum thin film. This process can be applied to electric devices in the way of not only various film geometry including large area (□ 100 mm (W) × 100 mm (L)) or patterned structure but also the diverse substrate selectivity including rigid or flexible substrate. More interestingly, preparations of aluminum film in this study can be unprecedentedly accomplished at room temperature with the help of chemical catalyst to decompose AlH3{O(C4H9)2} into Al, 1.5H2, and O(C4H9)2. Beyond the previously reported processes, the prepared Al films via solution-dipping process are comparable or even superior to Ag, Au, and Al films prepared by other solution processes and furthermore are found to be excellent in mechanical durability against external deformation.

摘要

一种由两步组成的溶液浸渍工艺,包括(i)基底的催化处理和(ii)将催化处理后的基底浸入 AlH3{O(C4H9)2}的铝前体溶液中,被建议用于低成本和简单制备铝薄膜。该工艺不仅可以应用于各种薄膜几何形状,包括大面积(□100mm(W)×100mm(L))或图案化结构,还可以应用于各种基底选择性,包括刚性或柔性基底,这是一种电装置。更有趣的是,在化学催化剂的帮助下,本研究中的铝薄膜的制备可以在室温下前所未有的完成,将 AlH3{O(C4H9)2}分解为 Al、1.5H2 和 O(C4H9)2。与之前报道的工艺相比,通过溶液浸渍工艺制备的 Al 薄膜在机械耐久性方面表现出色,可与通过其他溶液工艺制备的 Ag、Au 和 Al 薄膜相媲美,甚至更优,并且能够抵抗外部变形。

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