Faria Erica N, Douglas Samuel P, Mrig Shreya, Santoni Leonardo, Clancy Adam J, Wilson Daniel W N, Knapp Caroline E
Department of Chemistry, University College London, London, UK.
Nat Commun. 2025 Jul 1;16(1):5645. doi: 10.1038/s41467-025-60786-2.
The development of microelectronics prompts a search for precursors that can deposit conductive features. There is scarce research on Al as it is normally deposited using pyrophoric AlH etherates/aminates. Ligands can impart increased stability while maintaining the ability to deposit target materials. Accordingly, we have engineered an aluminium complex that can undergo conversion to Al(0) at 100 °C. Our multi-step synthetic design features β-ketoiminate compounds, [Al(R-ketoiminate)Cl] (R = Me, Et, Pr, Ph and Mes, 1-5) as starting materials to obtain aluminium hydride complexes: the polymeric amidoalane Li[AlH(Pr-Hacnac)AlH] (6) and the imidoalane cluster [AlHAlH(N-Mes)(AlH ּ Li(EtO))] (8). Decomposition of 8 into aluminium metal is observed when heated under vacuum at 100 °C and is confirmed by XRD, TEM, XPS. Deposition of a highly conductive film of Al is achieved from 8 after three weeks under nitrogen at room temperature. This represents a route to metallic aluminium involving non-pyrophoric precursors at low temperatures.
微电子学的发展促使人们寻找能够沉积导电特征的前驱体。由于铝通常使用自燃性的铝氢化物醚化物/胺化物进行沉积，因此关于铝的研究很少。配体可以在保持沉积目标材料能力的同时提高稳定性。因此，我们设计了一种铝配合物，它可以在100°C下转化为Al(0)。我们的多步合成设计以β-酮亚胺化合物[Al(R-酮亚胺)Cl]（R = 甲基、乙基、丙基、苯基和均三甲苯基，1-5）作为起始原料来获得氢化铝配合物：聚合氨基铝烷Li[AlH(Pr-Hacnac)AlH]（6）和亚氨基铝烷簇[AlHAlH(N-均三甲苯基)(AlH·Li(EtO))]（8）。当在100°C真空加热时，观察到8分解为金属铝，并通过XRD、TEM、XPS得到证实。在室温下氮气气氛中放置三周后，由8实现了高导电铝膜的沉积。这代表了一种在低温下使用非自燃性前驱体制备金属铝的途径。
