基于50Gb/s环形谐振器的硅调制器。

50-Gb/s ring-resonator-based silicon modulator.

作者信息

Baba Takeshi, Akiyama Suguru, Imai Masahiko, Hirayama Naoki, Takahashi Hiroyuki, Noguchi Yoshiji, Horikawa Tsuyoshi, Usuki Tatsuya

机构信息

Photonics Electronics Technology Research Association, Japan.

出版信息

Opt Express. 2013 May 20;21(10):11869-76. doi: 10.1364/OE.21.011869.

DOI:10.1364/OE.21.011869

PMID:23736409

Abstract

We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.

摘要

我们首次实现了基于环形谐振器的硅调制器50 Gb/s的运行速率。由侧壁光栅波导组成的PIN二极管移相器被加载到环形谐振器中。采用正向偏置工作模式，在25 GHz频率下，其V(π)L低至0.28 V·cm。在50 Gb/s速率下，驱动电压和光插入损耗分别为1.96 V(pp)和5.2 dB。