Baba Takeshi, Akiyama Suguru, Imai Masahiko, Hirayama Naoki, Takahashi Hiroyuki, Noguchi Yoshiji, Horikawa Tsuyoshi, Usuki Tatsuya
Photonics Electronics Technology Research Association, Japan.
Opt Express. 2013 May 20;21(10):11869-76. doi: 10.1364/OE.21.011869.
We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.
我们首次实现了基于环形谐振器的硅调制器50 Gb/s的运行速率。由侧壁光栅波导组成的PIN二极管移相器被加载到环形谐振器中。采用正向偏置工作模式，在25 GHz频率下，其V(π)L低至0.28 V·cm。在50 Gb/s速率下，驱动电压和光插入损耗分别为1.96 V(pp)和5.2 dB。
