采用铜行波电极的高效硅光调制器。

High-efficiency Si optical modulator using Cu travelling-wave electrode.

作者信息

Yang Yan, Fang Qing, Yu Mingbin, Tu Xiaoguang, Rusli Rusli, Lo Guo-Qiang

出版信息

Opt Express. 2014 Dec 1;22(24):29978-85. doi: 10.1364/OE.22.029978.

DOI:10.1364/OE.22.029978

Abstract

We demonstrate a high-efficiency and CMOS-compatible silicon Mach-Zehnder Interferometer (MZI) optical modulator with Cu traveling-wave electrode and doping compensation. The measured electro-optic bandwidth at Vbias = -5 V is above 30 GHz when it is operated at 1550 nm. At a data rate of 50 Gbps, the dynamic extinction ratio is more than 7 dB. The phase shifter is composed of a 3 mm-long reverse-biased PN junction with modulation efficiency (Vπ·Lπ) of ~18.5 V·mm. Such a Cu-photonics technology provides an attractive potentiality for integration development of silicon photonics and CMOS circuits on SOI wafer in the future.

摘要

我们展示了一种具有铜行波电极和掺杂补偿的高效且与CMOS兼容的硅马赫-曾德尔干涉仪（MZI）光调制器。当在1550 nm波长下工作时，在Vbias = -5 V时测得的电光带宽高于30 GHz。在50 Gbps的数据速率下，动态消光比超过7 dB。该移相器由一个3 mm长的反向偏置PN结组成，调制效率（Vπ·Lπ）约为18.5 V·mm。这种铜光子技术为未来在SOI晶圆上实现硅光子学和CMOS电路的集成发展提供了极具吸引力的潜力。