School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
ACS Appl Mater Interfaces. 2013 Jul 10;5(13):6108-12. doi: 10.1021/am400943z. Epub 2013 Jun 18.
We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.
我们研究了具有化学稳定性的双层锌锡氧化物（ZTO）/铟镓锌氧化物（IGZO）结构（DALZI）的化学稳定性和电学性能及其耐化学损伤能力。IGZO 薄膜很容易被化学腐蚀剂腐蚀或去除，但 DALZI 薄膜由于 ZTO 的高化学稳定性而得到有效保护。此外，与 IGZO TFT 相比，DALZI 薄膜晶体管（TFT）的电性能得到了改善，这是由于 Sn(4+)掺杂效应导致的空穴或孔位的钝化以及载流子浓度的增加，从而使薄膜更加致密。
