Bengu E, Collazo-Davila C, Grozea D, Landree E, Widlow I, Guruz M, Marks L D
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA.
Microsc Res Tech. 1998 Aug 15;42(4):295-301. doi: 10.1002/(SICI)1097-0029(19980915)42:4<295::AID-JEMT8>3.0.CO;2-P.
Results concerning the operation of a new ultrahigh vacuum (UHV) ion-beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic-boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.
报告了关于一种用于超硬薄膜原位研究的新型超高真空（UHV）离子束辅助沉积系统运行的结果。一个与表面科学系统（SPEAR）相连的分子束外延（MBE）腔室已被重新设计用于立方氮化硼薄膜的沉积。在对清洁的Si（001）衬底上氮化硼薄膜沉积的初步研究中，展示了整个系统的原位薄膜处理能力，将薄膜生长与电子显微镜和表面表征相结合，所有这些均在原位进行。
