National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305, USA.
Phys Rev Lett. 2013 Jun 28;110(26):263002. doi: 10.1103/PhysRevLett.110.263002. Epub 2013 Jun 26.
We demonstrate a trapped-ion entangling-gate scheme proposed by Bermudez et al. [Phys. Rev. A 85, 040302 (2012)]. Simultaneous excitation of a strong carrier and a single-sideband transition enables deterministic creation of entangled states. The method works for magnetic field-insensitive states, is robust against thermal excitations, includes dynamical decoupling from qubit dephasing errors, and provides simplifications in experimental implementation compared to some other entangling gates with trapped ions. We achieve a Bell state fidelity of 0.974(4) and identify the main sources of error.
我们展示了 Bermudez 等人提出的离子囚禁纠缠门方案[Phys. Rev. A 85, 040302 (2012)]。通过同时激发强载波和单边带跃迁，可以确定性地产生纠缠态。该方法适用于对磁场不敏感的态，对热激发具有鲁棒性，包括从量子比特退相误差中进行动态去耦，并与一些其他使用囚禁离子的纠缠门相比，在实验实现上更加简化。我们实现了 0.974(4)的贝尔态保真度，并确定了主要误差源。
