Guo Hangwen, Ward Thomas Z
Materials Science and Technology Division, Oak Ridge National Laboratory.
J Vis Exp. 2013 Jul 1(77):e50573. doi: 10.3791/50573.
Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices (1-3). Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.
诸如高温超导体、多铁性材料和巨磁电阻等复杂材料具有源于其内部固有强电子关联的电子和磁性特性。这些材料还可能存在电子相分离，即在单晶合金材料中，具有截然不同电阻和磁行为的区域能够共存。通过将这些材料的尺寸缩小到电子域固有尺寸及以下的长度尺度，可以揭示出新的行为。鉴于此，以及自旋 - 电荷 - 晶格 - 轨道序参量均涉及关联长度这一事实，在空间上缩小这些材料以进行输运测量是理解驱动复杂行为的基本物理原理的关键一步。这些材料也极具潜力成为下一代电子器件(1 - 3)。因此，制造低维纳米或微结构对于实现新功能极为重要。这涉及从高质量薄膜生长到精确电子性质表征的多个可控过程。在此，我们展示了用于复杂氧化物锰酸盐器件的高质量微结构的制造方案。文中给出了薄膜生长、光刻和引线键合的详细描述及所需设备。
