School of Physics and Advanced Materials, University of Technology, Sydney, P.O. Box 123, Broadway, New South Wales 2007, Australia.
ACS Appl Mater Interfaces. 2013 Aug 28;5(16):8002-7. doi: 10.1021/am402083n. Epub 2013 Aug 7.
We report a new mechanism that limits the rate of electron beam induced etching (EBIE). Typically, the etch rate is assumed to scale directly with the precursor adsorbate dissociation rate. Here, we show that this is a special case, and that the rate can instead be limited by the concentration of active sites at the surface. Novel etch kinetics are expected if surface sites are activated during EBIE, and observed experimentally using the electron sensitive material ultra nanocrystalline diamond (UNCD). In practice, etch kinetics are of interest because they affect resolution, throughput, proximity effects, and the topography of nanostructures and nanostructured devices fabricated by EBIE.
我们报告了一种新的机制，该机制限制了电子束诱导刻蚀（EBIE）的速率。通常，假定刻蚀速率与前体吸附物的离解速率直接成比例。在这里，我们表明这只是一个特殊情况，速率反而可以受到表面活性位的浓度限制。如果在 EBIE 过程中表面位被激活，则有望出现新的刻蚀动力学，并且使用电子敏感材料超纳米晶金刚石（UNCD）在实验中观察到了这种动力学。在实践中，刻蚀动力学很重要，因为它们会影响分辨率、吞吐量、近邻效应以及通过 EBIE 制造的纳米结构和纳米结构器件的形貌。
