Lobo Charlene J, Toth Milos, Wagner Raymond, Thiel Bradley L, Lysaght Michael
College of Nanoscale Science and Engineering, State University of New York at Albany, 251 Fuller Road, Albany, NY 12203, USA. Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia.
Nanotechnology. 2008 Jan 16;19(2):025303. doi: 10.1088/0957-4484/19/02/025303. Epub 2007 Dec 6.
Electron beam induced etching (EBIE) and deposition (EBID) are promising fabrication techniques in which an electron beam is used to dissociate surface-adsorbed precursor molecules to achieve etching or deposition. Spatial resolution is normally limited by the electron flux distribution at the substrate surface. Here we present simultaneous EBIE and EBID (EBIED) as a method for surpassing this resolution limit by using adsorbate depletion to induce etching and deposition in adjacent regions within the electron flux profile. Our simulation results indicate the possibility of growth control of radially symmetric nanostructures at the sub-1 nm length scale on bulk substrates. The technique is well suited to the fabrication of ring-shaped nanostructures such as those employed in plasmonics, sensing devices, magneto-optics and magnetoelectronics.
电子束诱导蚀刻（EBIE）和沉积（EBID）是很有前景的制造技术，其中电子束用于解离表面吸附的前驱体分子以实现蚀刻或沉积。空间分辨率通常受限于基底表面的电子通量分布。在此，我们提出同时进行EBIE和EBID（EBIED），作为一种通过利用吸附质耗尽在电子通量分布内的相邻区域诱导蚀刻和沉积来突破此分辨率限制的方法。我们的模拟结果表明，在块状基底上以亚1纳米长度尺度生长控制径向对称纳米结构是可能的。该技术非常适合制造诸如用于等离子体学、传感装置、磁光和磁电子学中的环形纳米结构。
