Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering,Tsinghua University, Beijing 100084, People's Republic of China.
Nanotechnology. 2013 Aug 23;24(33):335201. doi: 10.1088/0957-4484/24/33/335201. Epub 2013 Jul 26.
Resistive switching and conductance quantization are systematically studied in a Ag/poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester/indium-tin oxide sandwich structure. The observed bipolar switching behavior can be attributed to the formation and dissolution of Ag filaments during positive and negative voltage sweeps, respectively. More importantly, conductance quantization with both integer and half integer multiples of single atomic point contact can be realized by slowing down the voltage sweep speed as well as by pulse measurement. The former may reflect the formed Ag filaments with different atomic point contacts, while the latter probably originates from the interaction between the Ag filaments and the elemental hydrogen provided by the organic storage medium. With appropriate current compliances, low resistance states with desired quantized conductance values are successfully achieved, thus showing the potential for ultrahigh density memory applications. Besides, 100 successive switching cycles with densely distributed resistance values of each resistance state and extrapolated retention properties over ten years are also demonstrated.
在 Ag/聚(3-己基噻吩):[6,6]-苯基-C61-丁酸甲酯/氧化铟锡三明治结构中系统地研究了电阻开关和电导量子化。观察到的双极性开关行为可以归因于正、负电压扫描过程中 Ag 细丝的形成和溶解。更重要的是，通过降低电压扫描速度以及通过脉冲测量，可以实现具有整数和半整数倍单个原子点接触的电导量子化。前者可能反映了具有不同原子点接触的形成的 Ag 细丝，而后者可能源自 Ag 细丝与有机存储介质提供的元素氢之间的相互作用。通过适当的电流容限，可以成功实现具有所需量化电导值的低电阻状态，从而显示出超高密度存储应用的潜力。此外，还展示了 100 次连续切换循环，每个电阻状态的电阻值密集分布，并且经过十年的外推保留性能。
