Deswal Sweety, Malode Rupali R, Kumar Ashok, Kumar Ajeet
Academy of Scientific and Innovative Research, CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India.
RSC Adv. 2019 Mar 25;9(17):9494-9499. doi: 10.1039/c9ra00726a. eCollection 2019 Mar 22.
A detailed understanding of quantization conductance (QC), the correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC state to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well-defined multiple QC states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.
深入理解量子化电导（QC）、其与电阻开关现象的相关性以及对量子化状态的可控操纵对于实现原子级多级存储元件至关重要。在此，我们展示了Al/氧化铌/Pt电阻开关器件中高度稳定且可重复的量子化电导状态（QC状态）。通过施加截止电压和电流合规性的限制条件，已证明了对多级量子化状态存储器所需的QC状态的三种控制水平，即开启到不同量子化状态、从量子化状态关闭以及在一个QC状态与另一个QC状态之间进行可控的状态间切换。明确的多个QC状态以及各种状态之间切换的工作原理为多级存储器件的实现带来了希望。
