Kim J H, Kang C G, Kim Y T, Cheong W S, Song P K
Department of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea.
J Nanosci Nanotechnol. 2013 Jul;13(7):4601-7. doi: 10.1166/jnn.2013.6416.
Nanocytalline TiN films were deposited on non-alkali glass and Al substrates by reactive DC magnetron sputtering (DCMS) with an electromagnetic field system (EMF). The microstructure and corrosion resistance of the TiN-coated Al substrates were estimated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical methods. All the TiN films shows that they have a (111) preferred orientation at room temperature. TiN films deposited on Al substrate using only DCMS 400 W showed a sheet resistance of 3.22 x 10-1 omega/symbol see texts (resistivity, 3.22 x 10-5 omegacm). On the other hand, a relatively low sheet resistance of 1.91 x 10-1 omega/symbol see text (1.91 x 10-5 omegacm) was obtained for the dense nanocrystalline TiN film deposited on Al substrate using DCMS 375 W+ EMF 25 W, indicating that the introduction of an EMF system enhanced the electrical properties of the TiN film. TiN films deposited on Al substrate at 400 degreesC had a (200) preferred orientation with the lowest sheet resistance of 1.28x10-1 omega/symbol see texts (1.28 x 10-5 omegacm) which was attributed to reduced nano size defects and an improvement of the crystallinity. Potentiostatic and Potentiodynamic tests with a TiN-coated Al showed good corrosion resistance (l/corr, = 2.03 microA/cm2, Ecorr = -348 mV) compared to the uncoated Al substrate (/corr = 4.45 microA/cm2, Ecorr = -650 mV). Furthermore, EMF system showed that corrosion resistance of the TiN film also was enhanced compared to DCMS only. For the TiN film deposited on Al substrate at 400 degreesC, corrosion current and potential was 0.63 micro/cm2 and -1.5 mV, respectively. This improved corrosion resistance of the TiN film could be attributed to the densification of the film caused by enhancement of nitrification with increasing high reactive nitrogen radicals.
采用带有电磁场系统（EMF）的反应直流磁控溅射（DCMS）技术，在无碱玻璃和铝基板上沉积了纳米晶TiN薄膜。通过X射线衍射（XRD）、扫描电子显微镜（SEM）和电化学方法对TiN涂层铝基板的微观结构和耐腐蚀性进行了评估。所有TiN薄膜在室温下均显示出（111）择优取向。仅使用400W直流磁控溅射在铝基板上沉积的TiN薄膜的方阻为3.22×10⁻¹Ω/symbol see texts（电阻率为3.22×10⁻⁵Ω·cm）。另一方面，使用375W直流磁控溅射+25W电磁场系统在铝基板上沉积的致密纳米晶TiN薄膜的方阻相对较低，为1.91×10⁻¹Ω/symbol see text（1.91×10⁻⁵Ω·cm），这表明引入电磁场系统提高了TiN薄膜的电学性能。在400℃下沉积在铝基板上的TiN薄膜具有（200）择优取向，方阻最低，为1.28×10⁻¹Ω/symbol see texts（1.28×10⁻⁵Ω·cm），这归因于纳米尺寸缺陷的减少和结晶度的提高。与未涂层的铝基板（/corr = 4.45μA/cm²，Ecorr = -650mV）相比，TiN涂层铝的恒电位和动电位测试显示出良好的耐腐蚀性（l/corr = 2.03μA/cm²，Ecorr = -348mV）。此外，与仅使用直流磁控溅射相比，电磁场系统表明TiN薄膜的耐腐蚀性也得到了增强。对于在400℃下沉积在铝基板上的TiN薄膜，腐蚀电流和电位分别为0.63μA/cm²和 -1.5mV。TiN薄膜耐腐蚀性的提高可归因于随着高活性氮自由基的增加，氮化作用增强导致薄膜致密化。
