Graduate School of Engineering, Nagoya University, Furo-cho Nagoya 464-8603, Japan.
Microsc Microanal. 2013 Aug;19 Suppl 5:119-22. doi: 10.1017/S1431927613012464.
Microstructures of 3C-SiC grown by chemical vapor deposition (CVD) technique on undulant silicon substrate and a further developed technique called switch-back epitaxy (SBE) were studied using transmission electron microscopy (TEM). In case of the CVD sample, the density of the stacking faults was found to be significantly decreasing along growth direction. Sites of collision of stacking faults were observed using high-resolution transmission electron microscopy. Some of the stacking faults were observed to have disappeared after colliding into each other. The stacking faults were identified to be on the same type of plane and had the same type of displacement vector not only in CVD and SBE but also in the epitaxial layer on the SBE SiC samples.
使用透射电子显微镜（TEM）研究了化学气相沉积（CVD）技术在起伏硅衬底上生长的 3C-SiC 的微观结构和进一步发展的称为回扫外延（SBE）的技术。对于 CVD 样品，发现层错密度沿着生长方向显著降低。使用高分辨率透射电子显微镜观察到层错的碰撞点。观察到一些层错在相互碰撞后消失了。在 CVD 和 SBE 中以及在 SBE SiC 样品的外延层中，不仅发现这些层错位于相同类型的平面上，而且具有相同类型的位移矢量。
