平面石墨烯/SiO2 忆阻器中的可调谐电致发光。

Tunable electroluminescence in planar graphene/SiO(2) memristors.

机构信息

Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

出版信息

Adv Mater. 2013 Oct 18;25(39):5593-8. doi: 10.1002/adma.201302447. Epub 2013 Aug 6.

DOI:10.1002/adma.201302447

PMID:23922289

Abstract

Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

摘要

电致发光和电阻开关在石墨烯/SiO2 忆阻器器件中首次被同时实现。通过施加不同电压将器件设置为不同的电阻状态，可以可靠地将电致发光峰调谐在 550nm 和 770nm 之间。电阻开关和电致发光的结合可能会为这些与硅基电子学完全兼容的忆阻器器件带来新的功能。