Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.
Nano Lett. 2012 Mar 14;12(3):1235-40. doi: 10.1021/nl203597d. Epub 2012 Feb 10.
We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
我们通过嵌段共聚物自组装工艺在金属和石墨烯电极上直接形成有序的忆阻器纳米结构。优化的表面功能化提供了含硅嵌段共聚物薄膜的堆叠结构，从而生成均匀的忆阻器器件结构。由自组装嵌段共聚物薄膜的等离子体氧化形成的氧化硅薄膜和纳米点忆阻器均表现出具有适当置位和复位电压的单极性开关行为，适用于电阻式存储器应用。这种方法提供了一种非常方便的途径，可以制造超高密度的电阻式存储器器件，而无需依赖昂贵的光刻和图案转移工艺。
