Key Laboratory for Advanced Materials and Institute of Fine Chemicals, East China University of Science & Technology, 130 Meilong Road, Shanghai 200237, PR China.
J Colloid Interface Sci. 2013 Oct 15;408:59-65. doi: 10.1016/j.jcis.2013.06.069. Epub 2013 Jul 11.
In this work, the quantum dot CuInS2 layer was deposited on TiO2 film using successive ionic layer absorption and reaction (SILAR) method, and then two bithiazole-bridged dyes (BTF and BTB) were sensitized on the CuInS2/TiO2 films to form dye/CuInS2/TiO2 photoanodes for DSSCs. It was found that the quantum dots CuInS2 as an energy barrier layer not only could effectively improve open-circuit voltage (Voc) of solar cell, but also increase short-circuit photocurrent (Jsc) compared to the large decrease in Jsc of ZnO as energy barrier layer. The electrochemical impedance spectroscopy (EIS) measurement showed that the CuInS2 formed a barrier layer to suppress the recombination from injection electron to the electrolyte and improve open-circuit voltage. Finally, the open-circuit voltage increased about 22 and 27mV for BTF and BTB-/CuInS2/TiO2-based cells, the overall conversion efficiencies also reached to 7.20% and 6.74%, respectively.
在这项工作中，采用连续离子层吸附反应（SILAR）法将量子点 CuInS2 层沉积在 TiO2 薄膜上，然后用两种双噻唑桥联染料（BTF 和 BTB）敏化 CuInS2/TiO2 薄膜，形成染料/CuInS2/TiO2 光阳极用于 DSSCs。结果发现，量子点 CuInS2 作为能垒层不仅可以有效提高太阳能电池的开路电压（Voc），而且与 ZnO 作为能垒层导致的短路光电流（Jsc）大幅下降相比，还可以提高短路光电流（Jsc）。电化学阻抗谱（EIS）测量表明，CuInS2 形成了一个势垒层，抑制了注入电子与电解质的复合，从而提高了开路电压。最后，BTF 和 BTB-/CuInS2/TiO2 基电池的开路电压分别提高了约 22 和 27mV，整体转换效率也分别达到了 7.20%和 6.74%。
