Santra Pralay K, Nair Pratheesh V, George Thomas K, Kamat Prashant V
†Radiation Laboratory, Departments of Chemistry and Biochemistry, Chemical and Biomoelcular Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States.
‡School of Chemistry, Indian Institute of Science Education and Research-Thiruvananthapuram (IISER-TVM), CET Campus, Thiruvananthapuram 695 016, India.
J Phys Chem Lett. 2013 Mar 7;4(5):722-9. doi: 10.1021/jz400181m. Epub 2013 Feb 13.
Ternary metal chalcogenides such as CuInS2 offer new opportunities to design quantum dot solar cells (QDSC). Chemically synthesized CuInS2 quantum dots (particle diameter, 2.6 nm) have been successfully deposited within the mesoscopic TiO2 film using electrophoretic deposition (150 V cm(-1) dc field). The primary photoinduced process of electron injection from excited CuInS2 into TiO2 occurs with a rate constant of 5.75 × 10(11) s(-1). The TiO2/CuInS2 films are photoactive and produce anodic photocurrent with a power conversion efficiency of 1.14%. Capping the TiO2/CuInS2 film with a CdS layer decreases the interfacial charge recombination and thus offers further improvement in the power conversion efficiency (3.91%). The synergy of using CdS as a passivation layer in the composite film is also evident from the increased external quantum efficiency of the electrode in the red region where only CuInS2 absorbs the incident light.
诸如CuInS2之类的三元金属硫族化物为设计量子点太阳能电池（QDSC）提供了新机遇。通过化学合成的CuInS2量子点（粒径为2.6 nm）已利用电泳沉积法（150 V cm(-1)直流电场）成功沉积在介观TiO2薄膜内。从受激的CuInS2向TiO2进行电子注入的主要光致过程的速率常数为5.75×10(11) s(-1)。TiO2/CuInS2薄膜具有光活性，并产生阳极光电流，功率转换效率为1.14%。用CdS层覆盖TiO2/CuInS2薄膜可减少界面电荷复合，从而使功率转换效率进一步提高（3.91%）。从复合薄膜中用作钝化层的CdS使电极在仅CuInS2吸收入射光的红色区域的外部量子效率提高这一点，也能明显看出使用CdS的协同效应。
