Fu Bowen, Deng Chong, Yang Lin
College of Physics Science and Technology, Hebei University, Baoding, 071002, China.
Key Laboratory of Semiconductor Photovoltaic Technology of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
Nanoscale Res Lett. 2019 Jun 6;14(1):198. doi: 10.1186/s11671-019-2998-7.
Copper indium sulfide quantum dots (CuInS QDs) were incorporated into a nanocrystalline TiO film by using spin coating-assisted successive ionic layer adsorption and reaction process to fabricate CuInS QD-sensitized TiO photoelectrodes for the solid-state quantum dot-sensitized solar cell (QDSSC) applications. The result shows that the photovoltaic performance of solar cell is extremely dependent on the number of cycles, which has an appreciable impact on the coverage ratio of CuInS on the surface of TiO and the density of surface defect states. In the following high-temperature annealing process, it is found that annealing TiO/CuInS photoelectrode at a suitable temperature would be beneficial for decreasing the charge recombination and accelerating the charge transport. After annealing at 400 °C, a significantly enhanced photovoltaic properties of solid-state CuInS QDSSCs are obtained, achieving the power conversion efficiency (PCE) of 3.13%, along with an open-circuit voltage (V) of 0.68 V, a short-circuit photocurrent density (J) of 11.33 mA cm, and a fill factor (FF) of 0.41. The enhancement in the performance of solar cells is mainly ascribed to the suppression of charge recombination and the promotion of the electron transfer after annealing.
通过旋涂辅助连续离子层吸附和反应过程，将硫化铜铟量子点（CuInS QDs）掺入纳米晶TiO薄膜中，以制备用于固态量子点敏化太阳能电池（QDSSC）应用的CuInS QD敏化TiO光电极。结果表明，太阳能电池的光伏性能极大地依赖于循环次数，这对TiO表面上CuInS的覆盖率和表面缺陷态密度有显著影响。在随后的高温退火过程中，发现将TiO/CuInS光电极在合适的温度下退火有利于减少电荷复合并加速电荷传输。在400°C退火后，固态CuInS QDSSCs的光伏性能得到显著增强，实现了3.13%的功率转换效率（PCE），开路电压（V）为0.68 V，短路光电流密度（J）为11.33 mA cm，填充因子（FF）为0.41。太阳能电池性能的增强主要归因于退火后电荷复合的抑制和电子转移的促进。
