Nozaki Kengo, Matsuo Shinji, Takeda Koji, Sato Tomonari, Kuramochi Eiichi, Notomi Masaya
NTT Nanophotonics Center, NTT Corp., 3-1, Morinosato Wakamiya Atsugi, Kanagawa 243-0198, Japan.
Opt Express. 2013 Aug 12;21(16):19022-8. doi: 10.1364/OE.21.019022.
Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstrated for the first time. A sufficiently high DC responsivity of ~1 A/W was achieved for the 3.4-μm-long detector. The dynamic response revealed a 3-dB bandwidth of 6 GHz and a 10-Gb/s eye pattern. These results were thanks to the strong confinement of both photons and carriers in a small BH and will pave the way for unprecedented nano-photodetectors with a high quantum efficiency and small capacitance. Our device potentially has an ultrasmall junction capacitance of much less than 1 fF and may enable us to eliminate electrical amplifiers for future optical receivers and subsequent ultralow-power optical links on a chip.
首次展示了基于具有掩埋异质结构（BH）的光子晶体波导的超小铟镓砷光电探测器。对于3.4微米长的探测器，实现了约1 A/W的足够高的直流响应率。动态响应显示出6 GHz的3 dB带宽和10 Gb/s的眼图。这些结果得益于在小掩埋异质结构中光子和载流子的强限制，将为具有高量子效率和小电容的前所未有的纳米光电探测器铺平道路。我们的器件可能具有远小于1 fF的超小结电容，并可能使我们能够消除未来光接收器的电放大器以及芯片上后续的超低功耗光链路。
