MgZnO 型 p-n 异质结构发光器件。

MgZnO p-n heterostructure light-emitting devices.

机构信息

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.

出版信息

Opt Lett. 2013 Jun 15;38(12):2113-5. doi: 10.1364/OL.38.002113.

DOI:10.1364/OL.38.002113

PMID:23938994

Abstract

MgZnO heterostructure light-emitting devices (LEDs) have been fabricated from p-Mg(0.35)Zn(0.65)O/n-Mg(0.20)Zn(0.80)O structures, and the p-type Mg(0.35)Zn(0.65)O film was realized using a lithium-nitrogen codoping method. Obvious ultraviolet emission peaked at around 355 nm dominates the electroluminescence (EL) spectra of the device at room temperature, which comes from the near-band-edge emission of the n-type Mg(0.20)Zn(0.80)O film. This is the first report on MgZnO heterostructured LEDs and the shortest EL emission ever reported in ZnO-based p-n junction LEDs to the best of our knowledge.

摘要

MgZnO 异质结构发光二极管（LED）已由 p-Mg(0.35)Zn(0.65)O/n-Mg(0.20)Zn(0.80)O 结构制备而成，其中 p 型 Mg(0.35)Zn(0.65)O 薄膜采用锂氮共掺杂法实现。室温下，器件的电致发光（EL）光谱主要呈现出峰值约为 355nm 的紫外发射，这源于 n 型 Mg(0.20)Zn(0.80)O 薄膜的近带边发射。据我们所知，这是关于 MgZnO 异质结构 LED 的首个报道，也是 ZnO 基 p-n 结 LED 中最短的 EL 发射报道。