Liu Rulin, Chi Yaqing, Fang Liang, Tang Zhensen, Yi Xun
J Nanosci Nanotechnol. 2014 Feb;14(2):1647-57. doi: 10.1166/jnn.2014.8905.
Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the synthesis of carbon materials, such as diamond-like carbons (DLCs), carbon nanotubes (CNTs) and carbon nanowalls (CNWs). Advantages of PECVD are low synthesis temperature compared with thermal CVD and the ability to grow vertically, free-standing structures. Due to its self-supported property and high specific surface area, CNWs are a promising material for field emission devices and other chemical applications. This article reviews the recent process on the synthesis of CNW by the PECVD method. We briefly introduce the structure and properties of CNW with characterization techniques. Growth mechanism is also discussed to analyze the influence of plasma conditions, substrates, temperature, and other parameters to the final film, which will give a suggestion on parameter modulation for desired film.
等离子体增强化学气相沉积（PECVD）被广泛用于碳材料的合成，如类金刚石碳（DLC）、碳纳米管（CNT）和碳纳米壁（CNW）。与热化学气相沉积相比，PECVD的优点是合成温度低，并且能够生长垂直的、自立式结构。由于其自支撑特性和高比表面积，碳纳米壁是场发射器件和其他化学应用的一种有前途的材料。本文综述了通过PECVD方法合成碳纳米壁的最新进展。我们用表征技术简要介绍了碳纳米壁的结构和性能。还讨论了生长机制，以分析等离子体条件、衬底、温度和其他参数对最终薄膜的影响，这将为获得所需薄膜的参数调制提供建议。
