Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan.
Nat Commun. 2013;4:2293. doi: 10.1038/ncomms3293.
Current-induced magnetic domain wall motion is attractive for manipulating magnetization direction in spintronics devices, which open a new era of electronics. Up to now, in spite of a crucial significance to applications, investigation on a current-induced domain wall depinning probability, especially in sub-nano to a-few-nanosecond range has been lacking. Here we report on the probability of the depinning in perpendicularly magnetized Co/Ni nanowires in this timescale. A high depinning probability was obtained even for 2-ns pulses with a current density of less than 10¹² A m⁻². A one-dimensional Landau-Lifshitz-Gilbert calculation taking into account thermal fluctuations reproduces well the experimental results. We also calculate the depinning probability as functions of various parameters and found that parameters other than the coercive field do not affect the transition width of the probability. These findings will allow one to design high-speed and reliable magnetic devices based on the domain wall motion.
电流诱导磁畴壁运动在自旋电子学器件中很有吸引力，因为它开辟了电子学的新时代。到目前为止，尽管对应用具有重要意义，但对电流诱导畴壁去钉扎概率的研究，特别是在亚纳秒到数纳秒范围内的研究还很缺乏。在这里，我们报告了在这个时间尺度内垂直磁化 Co/Ni 纳米线中去钉扎的概率。即使在电流密度小于 10¹² A/m²的 2 纳秒脉冲下，也获得了很高的去钉扎概率。考虑热涨落的一维 Landau-Lifshitz-Gilbert 计算很好地再现了实验结果。我们还计算了各种参数下的去钉扎概率，并发现除了矫顽场之外的参数不会影响概率的跃迁宽度。这些发现将允许人们设计基于畴壁运动的高速和可靠的磁性器件。
