Physics Department & Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing, P. R. China.
Sci Rep. 2013;3:2566. doi: 10.1038/srep02566.
The long spin diffusion length makes graphene very attractive for novel spintronic devices, and thus has triggered a quest for integrating the charge and spin degrees of freedom. However, ideal graphene is intrinsic non-magnetic, due to a delocalized π bonding network. Therefore, synthesis of ferromagnetic graphene or its derivatives with high magnetization is urgent due to both fundamental and technological importance. Here we report that N-doping can be an effective route to obtain a very high magnetization of ca. 1.66 emu/g, and can make graphene oxide (GO) to be ferromagnetism with a Curie-temperature of 100.2 K. Clearly, our findings can offer the easy realization of ferromagnetic GO with high magnetization, therefore, push the way for potential applications in spintronic devices.
长的自旋扩散长度使石墨烯非常适合用于新型的自旋电子器件，因此引发了人们对整合电荷和自旋自由度的探索。然而，由于其离域的π键合网络，理想的石墨烯是本征非磁性的。因此，由于其基础和技术的重要性，合成具有高磁化强度的铁磁石墨烯或其衍生物是非常迫切的。在这里，我们报告说，氮掺杂是获得约 1.66 emu/g 的高磁化强度的有效途径，并且可以使氧化石墨烯（GO）具有 100.2 K 的居里温度的铁磁性。显然，我们的发现可以提供具有高磁化强度的铁磁 GO 的简单实现，从而为自旋电子器件的潜在应用铺平道路。
