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由于 LaAlO3/SrTiO3 异质界面的四方畴结构导致的局部电导率增强。

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO3/SrTiO3 heterointerfaces.

机构信息

1] Department of Applied Physics, Stanford University, Stanford, California 94305, USA [2] Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel [3].

出版信息

Nat Mater. 2013 Dec;12(12):1091-5. doi: 10.1038/nmat3753. Epub 2013 Sep 8.

Abstract

The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO3 and TiO2-terminated SrTiO3 (STO; refs 1, 2). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.

摘要

通过界面工程来控制材料性能的能力体现在某些绝缘体界面处出现导电性上,最著名的是带绝缘体 LaAlO3 和 TiO2 终止 SrTiO3(STO;参考文献 1、2)的{001}界面。在该体系中,传输和其他测量显示出大量不同的物理现象。为了更好地理解界面导电性,我们使用扫描超导量子干涉装置显微镜来局部成像电流在界面处产生的磁场。在低温下,我们发现电流在沿晶轴取向的导电窄路径中流动,嵌入在导电性较差的背景中。这些路径的配置在 STO 立方-四方结构相变温度以上的热循环中发生变化,这意味着 STO 四方畴结构强烈地改变了局部导电性。衬底畴和界面之间的相互作用为理解和控制异质结构的行为提供了另一种机制。

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