Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, LT-10223, Vilnius, Lithuania.
Sensors (Basel). 2013 Sep 12;13(9):12295-328. doi: 10.3390/s130912295.
The problem of drifting charge-induced currents is considered in order to predict the pulsed operational characteristics in photo-and particle-detectors with a junction controlled active area. The direct analysis of the field changes induced by drifting charge in the abrupt junction devices with a plane-parallel geometry of finite area electrodes is presented. The problem is solved using the one-dimensional approach. The models of the formation of the induced pulsed currents have been analyzed for the regimes of partial and full depletion. The obtained solutions for the current density contain expressions of a velocity field dependence on the applied voltage, location of the injected surface charge domain and carrier capture parameters. The drift component of this current coincides with Ramo's expression. It has been illustrated, that the synchronous action of carrier drift, trapping, generation and diffusion can lead to a vast variety of possible current pulse waveforms. Experimental illustrations of the current pulse variations determined by either the rather small or large carrier density within the photo-injected charge domain are presented, based on a study of Si detectors.
为了预测具有结控有源区的光电和粒子探测器的脉冲工作特性，研究了漂移电荷感应电流的问题。提出了在具有有限面积电极的平面平行几何形状的突变结器件中，由漂移电荷引起的场变化的直接分析。该问题采用一维方法求解。分析了部分和完全耗尽两种情况下感应脉冲电流的形成模型。得到的电流密度解包含了速度场对施加电压、注入表面电荷区位置和载流子俘获参数的依赖关系。该电流的漂移分量与拉莫（Ramo）的表达式一致。结果表明，载流子漂移、俘获、产生和扩散的同步作用会导致可能的电流脉冲波形的多样性。通过对硅探测器的研究，给出了由光电注入电荷区中的载流子密度较小或较大决定的电流脉冲变化的实验说明。
