Gaubas Eugenijus, Ceponis Tomas, Kuokstis Edmundas, Meskauskaite Dovile, Pavlov Jevgenij, Reklaitis Ignas
Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, Vilnius 10222, Lithuania.
Materials (Basel). 2016 Apr 18;9(4):293. doi: 10.3390/ma9040293.
Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μ = 1000 ± 200 cm²/Vs for electrons, and μ = 400 ± 80 cm²/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.
利用等离子体蚀刻和金属沉积技术，在通过氢化物气相外延和金属有机化学气相沉积技术生长的氮化镓材料上制备了电容器和肖特基二极管传感器。通过分析电流瞬变以及比较垂直和平行注入过量载流子域的实验情况，对这些器件的工作特性进行了研究。对载流子注入位置进行分析，能够分离双极和单极电荷漂移分量。对于通过氢化物气相外延（HVPE）生长的氮化镓材料，电子的载流子迁移率值估计为μ = 1000 ± 200 cm²/Vs，空穴的载流子迁移率值估计为μ = 400 ± 80 cm²/Vs。为了确定表面电荷形成和极化效应，研究了在注入局部和大量过量载流子包时的电流瞬变情况。
