Gaubas Eugenijus, Ceponis Tomas, Kalesinskas Vidas, Pavlov Jevgenij, Vysniauskas Juozas
Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania.
Sensors (Basel). 2015 Mar 5;15(3):5429-73. doi: 10.3390/s150305429.
The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material.
基于氮化镓的电容型和PIN二极管型探测器的运行动力学已使用动态模型和漂移扩散模型进行了模拟。漂移扩散电流模拟是通过使用Synopsys TCAD Sentaurus软件包实现的。单极和双极漂移机制已通过基于肖克利-拉莫定理的动态模型进行了分析。为了补偿由于在氮化镓探测器材料中引入辐射缺陷而导致的载流子寿命降低，已考虑了由碰撞电离确定的载流子倍增过程。
