College of Engineering, Swansea University, Swansea SA2 8PP, UK.
IET Nanobiotechnol. 2013 Jun;7(2):59-62. doi: 10.1049/iet-nbt.2012.0018.
Using an SPTS Technologies Ltd. Pegasus deep reactive-ion etching (DRIE) system, an advanced two-step etching process has been developed for hollow microneedles in applications of transdermal blood sampling and drug delivery. Because of the different etching requirements of both narrow deep hollow and large open cavity, hollow etch and cavity etch steps have been achieved separately. This novel two-step etching process is assisted with a bi-layer etching mask. Results show that the etch rate of silicon during this hollow etch step was about 7.5 microm/min and the etch rate of silicon during this cavity etch step was about 8-10 microm/min, using the coil plasma etching power between 2.0 and 2.8 kW. Especially for the microneedle bores etch, the deeper it etched, the slower the etch rate was. The microneedle bores have successfully been obtained 75-150 microm in inner diametre and 700-1000 microm long with high aspect ratio DRIE, meanwhile, the vertical sidewall structures have been achieved with the high etch load exposed area over 70% for the cavity etch step.
使用 SPTS Technologies Ltd. 的 Pegasus 深反应离子刻蚀(DRIE)系统,针对经皮采血和药物输送应用中的中空微针,开发了一种先进的两步刻蚀工艺。由于窄深中空和大开口腔体的刻蚀要求不同,因此分别实现了中空刻蚀和腔体刻蚀步骤。这种新颖的两步刻蚀工艺采用了双层刻蚀掩模。结果表明,在中空刻蚀步骤中,硅的刻蚀速率约为 7.5 微米/分钟,在腔体刻蚀步骤中,硅的刻蚀速率约为 8-10 微米/分钟,使用的线圈等离子体蚀刻功率在 2.0 到 2.8kW 之间。特别是对于微针孔的刻蚀,刻蚀深度越深,刻蚀速率越慢。使用深反应离子刻蚀成功获得了内径为 75-150 微米、长 700-1000 微米、高纵横比的微针孔,同时在腔体刻蚀步骤中,暴露面积超过 70%的高刻蚀负载实现了垂直侧壁结构。