Jongsukswat Sukswat, Fukamachi Tomoe, Ju Dongying, Negishi Riichirou, Hirano Keiichi, Kawamura Takaaki
Saitama Institute of Technology, Fukaya, Saitama 369-0293, Japan.
J Appl Crystallogr. 2013 Oct 1;46(Pt 5):1261-1265. doi: 10.1107/S0021889813019067. Epub 2013 Aug 24.
In X-ray interference fringes accompanied by mirage diffraction, variations have been observed in the spacing and position of the fringes from a plane-parallel Si single crystal fixed at one end as a function of distance from the incident plane of the X-rays to the free crystal end. The variations can be explained by distortion of the sample crystal due to gravity. From the variations and positions of the fringes, the strain gradient of the crystal has been determined. The distribution of the observed strain agrees with that expected from rod theory except for residual strain. When the distortion is large, the observed strain distribution does not agree with that expected from rod theory.
在伴有幻影衍射的X射线干涉条纹中,已观察到固定一端的平面平行硅单晶条纹的间距和位置随X射线入射平面到晶体自由端距离的变化。这些变化可以用重力引起的样品晶体畸变来解释。根据条纹的变化和位置,已确定了晶体的应变梯度。除残余应变外,观察到的应变分布与杆理论预期的分布一致。当畸变较大时,观察到的应变分布与杆理论预期的分布不一致。