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石墨烯覆盖的掺杂硅板之间的近场热辐射

Near-field thermal radiation between graphene-covered doped silicon plates.

作者信息

Lim Mikyung, Lee Seung S, Lee Bong Jae

出版信息

Opt Express. 2013 Sep 23;21(19):22173-85. doi: 10.1364/OE.21.022173.

Abstract

The present work describes a theoretical investigation of the near-field thermal radiation between doped Si plates coated with a mono-layer of graphene. It is found that the radiative heat flux between doped Si plates can be either enhanced or suppressed by introducing graphene layer, depending on the Si doping concentration and chemical potential of graphene. Graphene can enhance the heat flux if it matches resonance frequencies of surface plasmon at vacuum-source and vacuum-receiver interfaces. In particular, significant enhancement is achieved when graphene is coated on both surfaces that originally does not support the surface plasmon resonance. The results obtained in this study provide an important guideline into enhancing the near-field thermal radiation between doped Si plates by introducing graphene.

摘要

本文描述了对涂有单层石墨烯的掺杂硅板之间近场热辐射的理论研究。研究发现,根据硅的掺杂浓度和石墨烯的化学势,引入石墨烯层可以增强或抑制掺杂硅板之间的辐射热通量。如果石墨烯与真空源和真空接收器界面处表面等离子体的共振频率匹配,它可以增强热通量。特别是,当石墨烯涂覆在原本不支持表面等离子体共振的两个表面上时,会实现显著增强。本研究获得的结果为通过引入石墨烯增强掺杂硅板之间的近场热辐射提供了重要指导。

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